The principle of cathode sputtering technology lies in the creation of a glow discharge between two electrodes. This discharge, realized within a rarefied atmosphere, under vacuum, allows the formation of a plasma composed of charged particles (electrons, ions, photons) and neutrals (atoms).
The electric field generated by the difference in potential induces a movement of positively charged particles which are attracted by the cathode (target) and collide with it. This bombardment causes the sputtering of atoms or aggregates of atoms from the target which will condense on the substrate. On a macroscopic scale, this physical phenomenon could be compared to a “billiard breakage”.
In order to have an effective sputtering rate, the plasma gas used for this technology is the argon gas. Its atomic mass, its neutrality (complete valence shell), as well as its cost are ideal.
The main steps are:
This technology, commonly used in the industry of thin films, such as the semiconductor industry, sees its number of applications increase. Being a clean technology, it is a realistic and practical alternative to wet treatments.
The great majority of this type of PVD equipment uses magnetron cathode sputtering technology.
We also carry out PECVD (Plasma Enhanced Chemical Vapor Deposition) frames, being at the limit of CVD (Chemical Vapor Deposition) or chemical deposits, a complementary technology.
Discover the equipment that we manufacture using this cathodic sputtering technology.
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